氮化鋁（Aluminum Nitride, AlN）精密陶瓷材料

氮化鋁陶瓷（AlN）｜高導熱絕緣精密陶瓷材料

材料特性

氮化鋁（Aluminum Nitride, AlN）是一種兼具高導熱率（170~200 W/m·K）與電氣絕緣性的精密陶瓷，適用於高功率電子模組、封裝熱管理平台、半導體載具與等離子設備。具備低熱膨脹係數、無金屬污染特性，適合極高潔淨度製程。

應用領域

• 半導體封裝製程熱壓平台 / 加熱模組
• 高功率 LED / 雷射模組散熱基板
• PECVD / RTP 加熱塊 / 絕緣支撐件
• 功率模組 DBC / 絕緣板 / 雷射散熱器
• 靜電吸盤陶瓷板 / 封裝治具

特性數據

• 導熱率高達 170~200 W/m·K
• 介電常數低，絕緣性優異
• 熱膨脹係數與 Si 接近，匹配性好
• 不含氧化物，離子釋出低，適合真空製程

Aluminum Nitride (AlN) Ceramic｜High Thermal Conductivity & Electrically Insulating Ceramic

Material Properties

Aluminum nitride (AlN) combines exceptional thermal conductivity (170–200 W/m·K) with electrical insulation, making it an ideal material for thermal management in semiconductor and LED applications. It is also chemically stable, non-contaminating, and compatible with high vacuum and plasma processes.

Applications

• Thermal chucks & heating stages for packaging tools
• LED & laser diode heat sinks / substrates
• PECVD / RTP heating blocks and insulators
• Power module insulators / DBC substrates
• Electrostatic chucks / high-frequency isolators

Key Performance

• Thermal conductivity: 170–200 W/m·K
• High dielectric strength and low permittivity
• CTE close to silicon for matched expansion
• Low ionic contamination, vacuum compatible