碳化矽（Silicon Carbide, SiC）精密陶瓷材料

碳化矽陶瓷（SiC）｜高導熱耐腐蝕精密陶瓷材料

材料特性

碳化矽（SiC）陶瓷具備超高硬度、高熱導率、耐化學腐蝕、耐等離子蝕刻等優點，並可耐高溫至 1600°C 以上。其低熱膨脹係數與極佳熱穩定性，使其成為半導體製程與高溫裝置中不可或缺的材料。

應用領域

• 半導體製程：電漿蝕刻零件、CVD反應艙、熱盤、CHUCK
• 光電與太陽能：雷射平台、PECVD腔體、熱壓載具
• 鍍膜設備：PVD / Sputter中使用的 Shield Ring / 絕緣載具
• 化學與食品設備：耐酸鹼噴嘴、滑塊、閥座
• 高溫爐管、燃燒管、熱交換構件

特性說明

• 熱導率達 120~200 W/m·K
• 莫氏硬度 ≥ 9，僅次於金剛石
• 適用於等離子體蝕刻環境
• 抗熱震性優、極低膨脹率
• 可搭配石墨、金屬或石英複合設計

Silicon Carbide (SiC) Ceramic｜Thermally Conductive & Corrosion-Resistant Material

Material Properties

Silicon carbide (SiC) ceramics offer exceptional thermal conductivity, chemical resistance, plasma durability, and hardness, making them ideal for high-temperature and corrosive process environments such as semiconductor fabrication and PECVD chambers.

Applications

• Semiconductor: plasma etch rings, CVD components, hot plates, chucks
• Optoelectronics & solar: laser platforms, PECVD fixtures
• Coating tools: PVD/Sputter shield rings and isolators
• Chemical/food industries: acid-resistant nozzles, guides, valve seats
• High-temperature furnace tubes, flame tubes, heat exchangers

Key Features

• Thermal conductivity up to 120–200 W/m·K
• Mohs hardness ≥ 9, second only to diamond
• Plasma-resistant and chemically inert
• Excellent thermal shock resistance
• Custom hybrid design with graphite, quartz, or metal allowed