陶瓷 Shield Ring（電漿蝕刻用陶瓷遮蔽環
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陶瓷 Shield Ring｜電漿蝕刻製程遮蔽環
產品介紹
陶瓷 Shield Ring（遮蔽環）是電漿蝕刻設備中關鍵的保護性零件，安裝於晶圓周圍，用以限制蝕刻範圍、防止邊緣過度蝕刻、提升製程均勻性。此零件需長時間耐受高能離子轟擊與強氟化氣體，材質選擇與加工精度極為關鍵。
功能與優勢
- 隔離晶圓邊緣、保護核心製程區域
- 提升蝕刻均勻性與成膜品質
- 減少粒子產生與機台汙染
- 可重複使用、降低更換頻率
可選材料
- 碳化矽（SiC）：極高等離子體耐受性
- 氧化鋁（Al₂O₃）：絕緣性佳、性價比高
- 氧化鋯（ZrO₂）：抗裂韌性強
- 抗靜電陶瓷：抑制放電、提升 ESD 安全性
應用製程
- ICP / RIE 乾蝕刻製程
- Si、SiO₂、Si₃N₄ 薄膜蝕刻
- 功率元件、光電元件製造
- 先進封裝蝕刻平台
Ceramic Shield Rings｜For Plasma Etching & Dry Process
Product Overview
Ceramic shield rings are essential edge-protection components used in plasma etching systems. Installed around wafers, they serve to control etch boundaries, reduce edge over-etching, and improve process uniformity. These parts must withstand high-energy plasma and fluorine-based gases, making material quality and precision critical.
Functions & Advantages
- Protect wafer edge and active process zones
- Enhance etch uniformity and film profile control
- Reduce particle generation and contamination
- Reusable and cost-effective over multiple cycles
Available Materials
- Silicon Carbide (SiC): top plasma resistance
- Alumina (Al₂O₃): excellent insulator and durable
- Zirconia (ZrO₂): strong mechanical toughness
- ESD-safe Ceramic: anti-charge buildup and discharge safety
Process Applications
- ICP / RIE plasma etching tools
- Si / SiO₂ / Si₃N₄ film dry etch
- Power and optoelectronic device fabrication
- Advanced packaging and plasma chambers
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陶瓷 Shield Ring｜電漿蝕刻製程遮蔽環
產品介紹
陶瓷 Shield Ring（遮蔽環）是電漿蝕刻設備中關鍵的保護性零件，安裝於晶圓周圍，用以限制蝕刻範圍、防止邊緣過度蝕刻、提升製程均勻性。此零件需長時間耐受高能離子轟擊與強氟化氣體，材質選擇與加工精度極為關鍵。
功能與優勢
- 隔離晶圓邊緣、保護核心製程區域
- 提升蝕刻均勻性與成膜品質
- 減少粒子產生與機台汙染
- 可重複使用、降低更換頻率
可選材料
- 碳化矽（SiC）：極高等離子體耐受性
- 氧化鋁（Al₂O₃）：絕緣性佳、性價比高
- 氧化鋯（ZrO₂）：抗裂韌性強
- 抗靜電陶瓷：抑制放電、提升 ESD 安全性
應用製程
- ICP / RIE 乾蝕刻製程
- Si、SiO₂、Si₃N₄ 薄膜蝕刻
- 功率元件、光電元件製造
- 先進封裝蝕刻平台
Ceramic Shield Rings｜For Plasma Etching & Dry Process
Product Overview
Ceramic shield rings are essential edge-protection components used in plasma etching systems. Installed around wafers, they serve to control etch boundaries, reduce edge over-etching, and improve process uniformity. These parts must withstand high-energy plasma and fluorine-based gases, making material quality and precision critical.
Functions & Advantages
- Protect wafer edge and active process zones
- Enhance etch uniformity and film profile control
- Reduce particle generation and contamination
- Reusable and cost-effective over multiple cycles
Available Materials
- Silicon Carbide (SiC): top plasma resistance
- Alumina (Al₂O₃): excellent insulator and durable
- Zirconia (ZrO₂): strong mechanical toughness
- ESD-safe Ceramic: anti-charge buildup and discharge safety
Process Applications
- ICP / RIE plasma etching tools
- Si / SiO₂ / Si₃N₄ film dry etch
- Power and optoelectronic device fabrication
- Advanced packaging and plasma chambers
