快速升降溫製程（RTP）載盤（Rapid Thermal Processing Susceptors
-
快速升降溫製程（RTP）載盤｜高溫加熱載具解決方案
產品介紹
RTP（Rapid Thermal Processing）為半導體熱處理中重要的快速升溫與降溫工藝，應用於退火、摻雜、氧化等製程中。RTP 載盤作為晶圓支撐與導熱介面，需具備高溫穩定性、熱衝擊耐受性、化學惰性與絕緣或導電特性。
可選材料
- 碳化矽（SiC）：導熱性佳、耐高溫、可拋光表面
- 氧化鋁（Al₂O₃）：成本效益高，具絕緣性
- 氮化鋁（AlN）：兼具導熱與絕緣特性
- 石英（Quartz）：低熱膨脹率，適用高溫均熱處理
- 抗靜電陶瓷：可避免感應式放電，保護晶圓
特點與優勢
- 可耐溫 > 1200°C，適用瞬熱/急冷製程
- 低顆粒釋出、表面可鏡面處理
- 支援晶圓定位槽、真空吸附孔、自動對位設計
- 支援單晶圓/多晶圓尺寸（2"~12"）客製化
應用領域
- 快速熱退火（RTA）
- 摻雜活化（Dopant Activation）
- 介電層形成 / 高-k 熱處理
- 光電元件與功率元件熱製程
RTP Susceptor Plates｜Rapid Thermal Processing Carriers
Product Overview
RTP (Rapid Thermal Processing) is used for fast ramp-up and ramp-down heat treatments in semiconductor fabrication, such as annealing, doping, and oxidation. RTP susceptor plates support wafers under rapid temperature cycling, requiring thermal stability, shock resistance, chemical inertness, and insulation or conductivity control.
Available Materials
- Silicon Carbide (SiC): high thermal conductivity, polishable, plasma-resistant
- Alumina (Al₂O₃): cost-effective, good insulator
- Aluminum Nitride (AlN): thermally conductive and electrically insulating
- Quartz: ultra-low thermal expansion, good optical and thermal balance
- ESD-safe Ceramics: prevent electrostatic-induced wafer damage
Key Features
- Withstands >1200°C, ideal for thermal shock cycles
- Low particle generation, mirror surface finishing available
- Custom wafer pockets, vacuum slots, alignment features supported
- Compatible with 2” to 12” wafer sizes, full customization
Applications
- Rapid Thermal Annealing (RTA)
- Dopant Activation & Drive-In
- High-k Dielectric Treatments
- Optoelectronic & power device thermal processing
-
快速升降溫製程（RTP）載盤｜高溫加熱載具解決方案
產品介紹
RTP（Rapid Thermal Processing）為半導體熱處理中重要的快速升溫與降溫工藝，應用於退火、摻雜、氧化等製程中。RTP 載盤作為晶圓支撐與導熱介面，需具備高溫穩定性、熱衝擊耐受性、化學惰性與絕緣或導電特性。
可選材料
- 碳化矽（SiC）：導熱性佳、耐高溫、可拋光表面
- 氧化鋁（Al₂O₃）：成本效益高，具絕緣性
- 氮化鋁（AlN）：兼具導熱與絕緣特性
- 石英（Quartz）：低熱膨脹率，適用高溫均熱處理
- 抗靜電陶瓷：可避免感應式放電，保護晶圓
特點與優勢
- 可耐溫 > 1200°C，適用瞬熱/急冷製程
- 低顆粒釋出、表面可鏡面處理
- 支援晶圓定位槽、真空吸附孔、自動對位設計
- 支援單晶圓/多晶圓尺寸（2"~12"）客製化
應用領域
- 快速熱退火（RTA）
- 摻雜活化（Dopant Activation）
- 介電層形成 / 高-k 熱處理
- 光電元件與功率元件熱製程
RTP Susceptor Plates｜Rapid Thermal Processing Carriers
Product Overview
RTP (Rapid Thermal Processing) is used for fast ramp-up and ramp-down heat treatments in semiconductor fabrication, such as annealing, doping, and oxidation. RTP susceptor plates support wafers under rapid temperature cycling, requiring thermal stability, shock resistance, chemical inertness, and insulation or conductivity control.
Available Materials
- Silicon Carbide (SiC): high thermal conductivity, polishable, plasma-resistant
- Alumina (Al₂O₃): cost-effective, good insulator
- Aluminum Nitride (AlN): thermally conductive and electrically insulating
- Quartz: ultra-low thermal expansion, good optical and thermal balance
- ESD-safe Ceramics: prevent electrostatic-induced wafer damage
Key Features
- Withstands >1200°C, ideal for thermal shock cycles
- Low particle generation, mirror surface finishing available
- Custom wafer pockets, vacuum slots, alignment features supported
- Compatible with 2” to 12” wafer sizes, full customization
Applications
- Rapid Thermal Annealing (RTA)
- Dopant Activation & Drive-In
- High-k Dielectric Treatments
- Optoelectronic & power device thermal processing
