蝕刻 ICP 製程（Inductively Coupled Plasma Etching
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ICP 蝕刻製程用陶瓷零件
製程簡介
ICP（Inductively Coupled Plasma）蝕刻是一種高能等離子乾蝕刻技術，廣泛用於奈米級半導體製程中。 為了因應高密度等離子體、氟化氣體、離子撞擊與熱能負載，設備內部大量使用高純度陶瓷零件來提供耐蝕、絕緣與熱隔離功能。
關鍵陶瓷應用部位
- Upper / Lower Electrode 陶瓷絕緣環
- ICP Coil 繞線絕緣罩 / Plasma Chamber Liner
- Shield Ring、Focus Ring、Edge Ring、Cover Ring
- 射頻隔離片、導氣結構、熱隔墊片
推薦陶瓷材料
- 碳化矽（SiC）：超耐等離子腐蝕，適用核心部位
- 氧化鋁（Al₂O₃）：高性價比選擇，適用一般隔離件
- 氧化鋯（ZrO₂）：抗裂性佳，適用薄壁與抗衝擊區
- 氮化鋁（AlN）：具導熱性，用於熱隔與絕緣平衡
- 抗靜電陶瓷：避免因感應放電造成損害
應用特點
- 耐等離子體腐蝕與氟化氣體
- 低粒子釋放率，潔淨度高
- 尺寸穩定、壽命長
- 可支援導電/抗靜電陶瓷設計
Ceramic Components for ICP Etching Process
Process Overview
ICP (Inductively Coupled Plasma) etching is a critical dry etch method used in advanced semiconductor manufacturing. It involves high-density plasma and aggressive fluorine-based gases. To endure such harsh conditions, high-purity ceramic components are essential for chamber insulation, plasma confinement, and thermal shielding.
Key Ceramic Applications
- Upper / Lower Electrode Insulating Rings
- ICP Coil Insulators, Chamber Liners
- Shield Rings, Focus Rings, Edge Rings, Cover Plates
- RF Isolation Spacers, Gas Guide Plates, Thermal Blocks
Recommended Materials
- Silicon Carbide (SiC): Plasma corrosion-resistant for core zones
- Alumina (Al₂O₃): Cost-effective, general insulator
- Zirconia (ZrO₂): High toughness, impact-resistant
- Aluminum Nitride (AlN): Good thermal conductivity & insulation
- ESD-safe Ceramic: Prevents charge buildup and discharge damage
Performance Features
- Excellent plasma and fluorine gas resistance
- Low particle generation, ultra-clean surface
- High dimensional stability and lifespan
- Supports conductive / antistatic customization
-
ICP 蝕刻製程用陶瓷零件
製程簡介
ICP（Inductively Coupled Plasma）蝕刻是一種高能等離子乾蝕刻技術，廣泛用於奈米級半導體製程中。 為了因應高密度等離子體、氟化氣體、離子撞擊與熱能負載，設備內部大量使用高純度陶瓷零件來提供耐蝕、絕緣與熱隔離功能。
關鍵陶瓷應用部位
- Upper / Lower Electrode 陶瓷絕緣環
- ICP Coil 繞線絕緣罩 / Plasma Chamber Liner
- Shield Ring、Focus Ring、Edge Ring、Cover Ring
- 射頻隔離片、導氣結構、熱隔墊片
推薦陶瓷材料
- 碳化矽（SiC）：超耐等離子腐蝕，適用核心部位
- 氧化鋁（Al₂O₃）：高性價比選擇，適用一般隔離件
- 氧化鋯（ZrO₂）：抗裂性佳，適用薄壁與抗衝擊區
- 氮化鋁（AlN）：具導熱性，用於熱隔與絕緣平衡
- 抗靜電陶瓷：避免因感應放電造成損害
應用特點
- 耐等離子體腐蝕與氟化氣體
- 低粒子釋放率，潔淨度高
- 尺寸穩定、壽命長
- 可支援導電/抗靜電陶瓷設計
Ceramic Components for ICP Etching Process
Process Overview
ICP (Inductively Coupled Plasma) etching is a critical dry etch method used in advanced semiconductor manufacturing. It involves high-density plasma and aggressive fluorine-based gases. To endure such harsh conditions, high-purity ceramic components are essential for chamber insulation, plasma confinement, and thermal shielding.
Key Ceramic Applications
- Upper / Lower Electrode Insulating Rings
- ICP Coil Insulators, Chamber Liners
- Shield Rings, Focus Rings, Edge Rings, Cover Plates
- RF Isolation Spacers, Gas Guide Plates, Thermal Blocks
Recommended Materials
- Silicon Carbide (SiC): Plasma corrosion-resistant for core zones
- Alumina (Al₂O₃): Cost-effective, general insulator
- Zirconia (ZrO₂): High toughness, impact-resistant
- Aluminum Nitride (AlN): Good thermal conductivity & insulation
- ESD-safe Ceramic: Prevents charge buildup and discharge damage
Performance Features
- Excellent plasma and fluorine gas resistance
- Low particle generation, ultra-clean surface
- High dimensional stability and lifespan
- Supports conductive / antistatic customization
